Low Temperature Synthesis of ZrO2 and CrO2
نویسندگان
چکیده
Some issues such as tunneling, leakage current and light atom penetration through the film are threatening the ultra thin SiO2 be as a good dielectric for future industrial and electronic devices. Moreover, ultra fine and pure ZrO2/CrO2 are also so important in ceramic technologies. We have demonstrated a series of experiments to synthesis ZrO2 as well as CrO2 at low temperature with using sol-gel method. The obtained results show that a ZrO2/CrO2 can be used as a gate for the future of nano electronic as well as nano particles in stability of Stainless Steel (SS) material of Ultra High Vacuum (UHV) chambers. These structures have been studied by using XRD technique.
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